Archive for December, 2007

Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil

The effect of uniaxial tensile strain parallel to the channel on mobility of polycrystalline silicon thin-film transistors on stainless steel foil has been investigated. The electron mobility increases by 20% while the hole mobility decreases by 6% as the strain increases to 0.5% and both followed by saturation as the strain increases further. The off current decreases for both types TFTs under strain. All TFTs remained functional at the applied strain of 1.13%.

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Monday, December 17th, 2007 Electrical & Computer Engineering Comments Off

A Quantum Mechanical Mobility Model for Scaled NMOS Transistors with Ultra-thin High-K Dielectrics and Metal Gate Electrodes

At the ITRS 45nm technology node, NMOS transistors with high-K dielectrics have an effective oxide thickness (EOT) less than 1nm. Electron mobility in these devices is affected by quantization of carrier energy and a redistribution of carriers at the semiconductor and gate dielectric interface due to the decrease of the gate dielectric layer thickness and the increase of substrate doping. Electron mobility is also affected by surface roughness and Coulomb scattering rising from the interface traps and fixed charges in the high-K layer. We develop a quantum mechanical model for electron mobility, including Coulomb scattering of carriers and surface roughness in scaled high-K, metal-gate, NMOS transistors, which predicts an increase in Coulomb scattering mobility and a slow decrease of surface roughness mobility with increasing the gate voltage. The total mobility is limited by the bulk mobility because of the need for highly-doped substrates for scaled 45nm node transistors.

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Wednesday, December 12th, 2007 Electrical & Computer Engineering, Physics Comments Off

Temperature Dependant Characteristics of Scaled NMOS Transistors with Ultra-thin High-K Dielectrics and Metal Gate Electrodes

In order to maintain the continuous scaling of CMOS devices, high-K dielectrics and metal gate electrodes have been used at ITRS (International Technology Roadmap for Semiconductor) 45nm technology node. In this paper, we discuss the temperature dependence of the threshold voltage, electron mobility and gate leakage current for the scaled NMOS transistor, which has an interfacial SiO2 layer (0.5nm) and an ALD (Atomic Layer Deposition) fabricated HfO2 dielectric layer (2.0nm) with a 10nm TiN metal gate electrode covered by polysilicon. Our analysis indicates both the threshold voltage and the electron mobility decrease with increasing the temperature, and the metal workfunction decreases at a rate of ~ 10-4 eV/K. Gate leakage current increases with the temperature, which will increase power consumption at high temperature.

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Wednesday, December 12th, 2007 Electrical & Computer Engineering, Physics Comments Off

A Quantum Mechanical Model of Gate Leakage Current for Scaled NMOS Transistors with Ultra-thin High-K Dielectrics and Metal Gate Electrodes

The continuous scaling of the gate insulator layer thickness in CMOS devices leads to excessive gate leakage current and device reliability problems. High-K material has been used to achieve equivalent electrical thickness with thicker physical thickness to reduce the gate leakage and improve the device performance at ITRS (International Technology Roadmap for Semiconductor) 45nm technology node. In this paper, we have investigated the gate leakage current by considering both direct tunneling (DT) and trap-assisted tunneling (TAT) quantum mechanically for a scaled NMOS transistor, which has an interfacial SiO2 layer (0.5nm) and an ALD (Atomic Layer Deposition) fabricated HfO2 dielectric layer (1.6nm) with a 10nm TiN metal gate electrode covered by polysilicon. In our simulations, we conclude 80% of the current is carried by DT and 20% of the current is carried by TAT. Gate leakage current varies with dielectric layer thickness, and DT current is more sensitive to the physical thickness compared with TAT current. The proper control of the interfacial layer is important to continue CMOS device scaling.

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Wednesday, December 12th, 2007 Electrical & Computer Engineering, Physics Comments Off

Diminished Mercury Emission From Water Surfaces by Duckweed (Lemna minor)

Aquatic plants of the family Lemnaceae (generally referred to as duckweeds) are a widely distributed type of floating vegetation in freshwater systems. Under suitable conditions, duckweeds form a dense vegetative mat on the water surface, which reduces light penetration into the water column and decreases the amount of exposed water surface. These two factors would be expected to reduce mercury emission by limiting a) direct photoreduction of Hg(II), b) indirect reduction via coupled DOC photooxidation-Hg(II) reduction, and c) gas diffusion across the water-air interface. Conversely, previous studies have demonstrated transpiration of Hg(0) by plants, so it is therefore possible that the floating vegetative mat would enhance emission via transpiration of mercury vapor. The purpose of this experiment was to determine whether duckweed limits mercury flux to the atmosphere by shading and the formation of a physical barrier to diffusion, or whether it enhances emission from aquatic systems via transpiration of Hg(0).

Deionized water was amended with mercury to achieve a final concentration of approximately 35 ng/L and allowed to equilibrate prior to the experiment. Experiments were conducted in rectangular polystyrene flux chambers with measured UV-B transmittance greater than 60% (spectral cutoff approximately 290 nm). Light was therefore able to penetrate the flux chamber from the sides as well as the top throughout the experiment, limiting the effect of shading by duckweed on the water surface. Flux chambers contained 8L of water with varying percent duckweed cover, and perforated plastic sheeting was used as an abiotic control. Exposures were conducted outside on days with little to no cloud cover. Real time mercury flux was measured using atomic absorption (Mercury Instruments UT-3000). Total solar and ultraviolet radiation, as well as a suite of meteorological parameters, were also measured. Results indicate that duckweed diminishes mercury emission from the water surface as compared to open water controls. Decreases in emission rate varied linearly with percent duckweed cover, with lower fluxes occurring at higher percent cover. Mercury flux in the duckweed treatments as compared to open water treatments decreased from 17% in the lowest percent cover treatment to 67% in the highest percent cover treatment. The observed decrease in mercury emission suggests that duckweed limits emission via the formation of a physical barrier to diffusion.

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Tuesday, December 11th, 2007 Earth & Environmental Sciences Comments Off